Chemical Sensors:Simulation and Modeling Volume 4:Optical Sensors

Ghenadii Korotcenkov

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Chemical sensors are integral to the automation of myriad industrial processes and everyday monitoring of such activities as public safety, engine performance, medical therapeutics, and many more. This 5 volume reference work covering simulation and modeling will serve as the perfect complement to Momentum Press's 6 volume reference works 'Chemical Sensors: Fundamentals of Sensing Materials' and 'Chemical Sensors: Comprehensive Sensor Technologies', which present detailed information related to materials, technologies, construction and application of various devices for chemical sensing. This 5 volume comprehensive reference work analyzes approaches used for computer simulation and modeling in various fields of chemical sensing and discusses various phenomena important for chemical sensing such as bulk and surface diffusion, adsorption, surface reactions, sintering, conductivity, mass transport, interphase interactions, etc. In this work it will be shown that theoretical modeling and simulation of the processes, being a basic for chemical sensors operation, could provide considerable progress in choosing both optimal materials and optimal configurations of sensing elements for using in chemical sensors. Each simulation and modeling volume in the present series reviews modeling principles and approaches peculiar to specific groups of materials and devices applied for chemical sensing. Volume 4: Optical Sensors covers various approaches used for modeling and simulation of different types optical sensors such as fiber optic, surface Plasmon resonance, Fabry-Perot interferometer, transmittance in the mid-infrared region, luminescence based devices, etc. Approaches used for design and optimization of optical systems aimed for remote gas sensing and gas analysis chamber for NDIR spectral range are discussed as well. The description of multiscale atomistic simulation of hierarchical nanostructured materials for optical chemical sensing is also included in present volume.

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Ghenadii Korotcenkov

Ghenadii Korotcenkov received his PhD in Physics and Technology of Semiconductor Materials and Devices from Technical University of Moldova in 1976 and his Dr. Sci. degree in Physics of Semiconductors and Dielectrics from Academy of Science of Moldova in 1990 (Highest Qualification Committee of the USSR, Moscow). He has more than 40-year experience as a teacher and scientific researcher.